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Accommodated with top-tier facilities made available to the HKU community and beyond.
Facilities
The Central Fabrication Laboratory offers a wide spectrum of fabrication equipment to facilitate different needs in teaching and research. If you wish to use any specified equipment, please apply for access using the form.
Specifications
- Purely thermal configuration
- Substrate size: up to 6" (150mm)
- Deposition Uniformity: Thermal AL2O3-1%
- Typical Processes: Al2O3, HfO2, ZrO2
Specifications
- Substrate size: up to 150mm round wafers
- TSA alignmTop Side Alignment; ent accuracy: <0.5µm
- LED lamp house (include I-line, G-line, H-line)
- MO Exposure Optics
- Intensity uniformity <2.5%
- Constant dose accuracy: 1.5%
- Resolution down to 0.8 µm L/S (vacuum contact)
Specifications
- RF Power source: 600W(max0) at 13.56MHz
- Electrode coolant system: -30~80°C
- Substrate size: up to 8inch wafer.
- Silicon Dioxide etch: 250A/min
- Au etch: 150A/min.
- Uniformity(within wafer):+/-5%
Specifications
- Digital LVDT sensors provide XY noise of <60pm
- AC Height Noise: <15pm ADev in a 0.1Hz to 1kHz BW
- Scanning rate ≥ 20Hz
- Automated laser spot positioning and photodetector centering
Specifications
- Three 3’’ Torus® Magnetron Sputtering sources
- DC sputtering power source: 1500W
- RF sputtering power source: 300W at 13.56MHz
- Base pressure: 5 x 10-7 torr
- Substrate size: up to 6" (150mm) in diameter or 100x100mm
- Substrate fixture: rotation and water cooling
Specifications
- 4 pocket 8cc Electron Beam Evaporation Source
- E-beam power source: 5KW
- Base pressure: 5 x 10-7 torr
- Substrate size: up to 6" (150mm) in diameter or 100x100mm
- Substrate fixture: rotation and water cooling
- Film thickness controller with 2 crystal sensors
Specifications
- Three Thermal Evaporation Sources
- Thermal Evaporation power source: DC power supply, up to 12V or 400A, max 2kW applied power
- Two 10cc Low Temperature Evaporation organic material sources
- Two 1cc Low Temperature Evaporation organic material sources
- Base pressure: 5 x 10-7 torr
- Substrate size: up to 6" (150mm) in diameter or 100x100mm
- Substrate fixture: rotation and 350°C heating
- Film thickness controller with 3 crystal sensors
Specifications
- Fastest, easiest and the most automated preparation of high-quality samples for HR S/TEM with AutoTEM 5
- Access to ultra high-resolution imaging with the most precise contrast for users with any experience
- Easiest access to high resolution, multi-scale and multi-modal subsurface and 3D information
- Fastest, most accurate, and precise milling and deposition of complex structures with critical dimensions of less than 10 nm
Specifications
- Power Source: 100W / 2.45GHz
- Sample substrate size: Maximum 4 inch, 3 mm thickness
- Target size: Maximum 3 inch, 3mm thickness
- Ion flow stability: ±5% / 2h (High acceleration, 1500V)
- Si with Fluorocarbons gas - Etching rate: 860Å/min
- Quartz with Fluorocarbons gas - Etching rate: 1000Å/min